Scientists develop high-performance transistors and circuits useful for space and defense applications

New Delhi, January 3, 2022: Indian researchers have developed a high-performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF) circuits owing to its high breakdown voltage. Radio Frequency circuits include amplifiers and switches, which are used in wireless transmission […]